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jmnic product specification silicon pnp power transistors 2SB1063 description ? ? with to-220fa package ? complement to type 2sd1499 ? wide area of safe operation ? high f t applications ? for high power amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector -emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i cm collector current-peak -8 a t a =25 ?? 2.0 p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon pnp power transistors 2SB1063 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-3a ;i b =-0.3a -2.0 v v be base-emitter on voltage i c =-3a ; v ce =-5v -1.8 v i cbo collector cut-off current v cb =-100v; i e =0 -50 | a i ebo emitter cut-off current v eb =-3v; i c =0 -50 | a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe-2 dc current gain i c =-1a ; v ce =-5v 40 200 h fe-3 dc current gain i c =-3a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 20 mhz c ob collector output capacitance i e =0 ; v cb =-10v; f=1mhz 170 pf ? h fe-2 classifications r q p 40-80 60-120 100-200
jmnic product specification 3 silicon pnp power transistors 2SB1063 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)

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